p型高压LDMOS晶体管的热载流子应力退化模式

2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173291

H. Enichlmair, J. M. Park, S. Carniello, B. Loeffler, R. Minixhofer, M. Levy

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引用次数: 14

摘要

研究了p型LDMOS高压晶体管在不同应力条件下的热载流子应力诱发器件退化。讨论了浅沟角化和碳离子注入浅沟区的影响。数值装置模拟，电荷泵测量和电气特性用于这些研究。

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Hot carrier stress degradation modes in p-type high voltage LDMOS transistors

The hot carrier stress induced device degradation of a p-type LDMOS high voltage transistor is investigated at different stress conditions. The influence of shallow trench corner rounding and carbon ion implantation into the shallow trench region is discussed. Numerical device simulations, charge pumping measurements and electrical characterisations are used for these investigations.

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2009 IEEE International Reliability Physics Symposium

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