C. Herzinger, P. G. Snyder, F. Celii, Y. Kao, B. Johs, J. Woollam
{"title":"InP上应变AlAs和InAs层椭偏厚度测定的光学常数","authors":"C. Herzinger, P. G. Snyder, F. Celii, Y. Kao, B. Johs, J. Woollam","doi":"10.1109/ICIPRM.1994.328177","DOIUrl":null,"url":null,"abstract":"Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP\",\"authors\":\"C. Herzinger, P. G. Snyder, F. Celii, Y. Kao, B. Johs, J. Woollam\",\"doi\":\"10.1109/ICIPRM.1994.328177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical constants for ellipsometric thickness determination of strained AlAs and InAs layers on InP
Optical constants appropriate for ellipsometric thickness measurements have been determined for strained AlAs and InAs layers on an InP substrate with lattice matched InGaAs buffer layers. A procedure involving the simultaneous analysis of data from more than one sample with different layer thicknesses was used. Data acquisition and analysis for large incidence angles demonstrate the possibility of retrofitting growth chambers with an ellipsometer probe for in situ thickness monitoring and control, through existing RHEED ports.<>
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