固体磷MBE法生长掺杂硅、铍的InP

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328183

J. Baillargeon, A. Cho, R. Fischer, P. Pearah, K. Cheng

{"title":"固体磷MBE法生长掺杂硅、铍的InP","authors":"J. Baillargeon, A. Cho, R. Fischer, P. Pearah, K. Cheng","doi":"10.1109/ICIPRM.1994.328183","DOIUrl":null,"url":null,"abstract":"Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Growth of silicon and beryllium doped InP by MBE using solid phosphorus\",\"authors\":\"J. Baillargeon, A. Cho, R. Fischer, P. Pearah, K. Cheng\",\"doi\":\"10.1109/ICIPRM.1994.328183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

大多数InP外延生长技术要求PH/sub 3/。由于PH/sub - 3/是剧毒的，这种处理变得越来越困难。固体磷源MBE提供了一种危害较小的替代品。本文介绍了用阀式裂化池在红磷中生长Si和Be掺杂InP的性能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properties of Si and Be doped InP grown with red phosphorus using a valved cracking cell.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量