降低CMOS处理器功耗的电源电压策略

Jin Cai, Y. Taur, Shih-Fen Huang, D. Frank, S. Kosonocky, R. Dennard
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引用次数: 15

摘要

本文提出了一种双电源电压策略,以降低高性能CMOS处理器的总(静态和动态)功率。通过用电源电压V/sub DD/和阈值电压V/sub T/表示CMOS延迟、静态功率和动态功率,执行了考虑电路活度因素的优化程序,以找到给定性能水平下最小总功率的V/sub DD/和V/sub T/。结果表明,在100 nm节点CMOS技术中,采用低电压(0.5 V)和高电压(1.2 V)分别为高活性电路和低活性电路提供低电压,可实现50%的功耗降低或20%的性能提升。
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Supply voltage strategies for minimizing the power of CMOS processors
This paper presents a dual supply voltage strategy for reduction of the total (static and dynamic) power of high performance CMOS processors. By expressing CMOS delay, static power, and dynamic power in terms of the power supply voltage V/sub DD/ and threshold voltage V/sub T/, an optimization procedure that takes the circuit activity factor into account is performed to find the V/sub DD/ and V/sub T/ for minimum total power at given performance levels. It is shown that 50% power reduction or 20% performance enhancement can be attained by adopting both a low (0.5 V) supply voltage for high-activity circuits and a high (1.2 V) supply voltage for low-activity circuits in a 100 nm-node CMOS technology.
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