Suppression of leakage current in SOI CMOS LSIs by using silicon-sidewall body-contact (SSBC) technology

This paper clarifies two SOI-specific leakage components, STI-induced punchthrough and gate-oxide leakage, found especially in large-scale integration, and proposes a new SOI technology: silicon-sidewall body-contact (SSBC). Without layout penalty and process complexity, SSBC realizes self-aligned body contact to the substrate, which suppresses gate-oxide leakage, and prevents the SOI body from being mechanically stressed, thus eliminating punchthrough leakage. SSBC is promising for scaled SOI CMOS LSIs.