R. Gusmeroli, C. M. Compagnoni, A. Riva, A. Spinelli, A. Lacaita, M. Bonanomi, A. Visconti
{"title":"统计随机电报噪声分析SiO2缺陷光谱","authors":"R. Gusmeroli, C. M. Compagnoni, A. Riva, A. Spinelli, A. Lacaita, M. Bonanomi, A. Visconti","doi":"10.1109/IEDM.2006.346819","DOIUrl":null,"url":null,"abstract":"We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"Defects spectroscopy in SiO2 by statistical random telegraph noise analysis\",\"authors\":\"R. Gusmeroli, C. M. Compagnoni, A. Riva, A. Spinelli, A. Lacaita, M. Bonanomi, A. Visconti\",\"doi\":\"10.1109/IEDM.2006.346819\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346819\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346819","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defects spectroscopy in SiO2 by statistical random telegraph noise analysis
We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects
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