一种多层可堆叠薄膜晶体管(TFT) nand型快闪存储器

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346903

E. Lai, H. Lue, Y. Hsiao, J. Hsieh, Chi-Pin Lu, Szu-Yu Wang, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, J. Gong, K. Hsieh, Rich Liu, Chih-Yuan Lu

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引用次数: 70

摘要

展示了一种双层TFT nand型闪存，开启了三维(3D)闪存时代。使用带隙工程SONOS (BE-SONOS) (Lue等人，2005年，Lai等人，2006年)的TFT器件具有全耗尽(FD)多晶硅(60 nm)通道和三栅P+-多晶硅栅极集成到NAND阵列中。器件体积小(L/W=0.2/0.09 μ m)，具有优异的性能和可靠性。与顶层相比，底层没有显示出可靠性下降的迹象，这表明了进一步多层堆叠的潜力。本文的工作说明了三维闪存的可行性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability properties are achieved. The bottom layer shows no sign of reliability degradation compared to the top layer, indicating the potential for further multi-layer stacking. The present work illustrates the feasibility of 3D flash memory

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2006 International Electron Devices Meeting

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