描述功率晶体管热安全工作区域的简洁电热模型

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117633

Jian-Hsing Lee, Gong-Kai Lin, Chun-Chih Chen, Li-Fan Chen, Chien-Wei Wang, Shao-Chang Huang, Ching-Ho Li, Chih-Cherng Liao, Jung-Tsun Chuang, Ke-Horng Chen

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摘要

推导了功率晶体管热安全工作区域(T-SOA)的物理模型。该模型提供了一种简洁的方法来获得T-SOA测量过程中功率晶体管对应的温度和故障时间的精确和即时解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Concise Electrothermal Model to Characterize the Thermal Safe-Operating Area of Power Transistor

A physical model is derived to characterize the thermal safe-operating area (T-SOA) of power transistor. This model provides a concise methodology to get the precise and instant solutions of the temperature, and time to failure corresponding to IV for power transistor during the T-SOA measurement.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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