Localized thermal effects in Gate-all-around devices

Gate-all-around (GAA) devices continue the technology trends of increased localized thermal confinement and higher performance. We describe the methodology used for localized thermal analysis and data collection of temperature rise on the transistor scale and compare GAA cell thermal resistance to Fin-FET cells. We demonstrate that the implications of GAA on device temperature are not a constraint to realizing the full technology benefits with proper thermal management.