栅极全能双硅纳米线场效应晶体管热载流子可靠性研究

2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173286

Y. Yeoh, S. Suk, Ming Li, K. Yeo, Dong-Won Kim, G. Jin, Kyoungsuk Oh

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引用次数: 8

摘要

本文报道并详细讨论了栅极-全能双硅纳米线场效应晶体管(GAA TSNWFET)的热载流子可靠性，包括纳米线沟道的尺寸和形状、栅极长度、厚度和栅极介电介质的种类。纳米线沟道尺寸越小，栅极长度越短，栅极氧化物厚度越薄，热载流子可靠性越差。10年保修期最差VD为1.31V，满足ITRS路线图要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

Hot carrier (HC) reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2nm thickness show worse hot carrier reliability. The worst VD for 10 years guaranty, 1.31V, satisfies requirement of ITRS roadmap.

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2009 IEEE International Reliability Physics Symposium

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