{"title":"InGaAsP的选择性区域处理","authors":"S. Pearton, C. Abernathy, F. Ren","doi":"10.1109/ICIPRM.1994.328195","DOIUrl":null,"url":null,"abstract":"The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selective area processing of InGaAsP\",\"authors\":\"S. Pearton, C. Abernathy, F. Ren\",\"doi\":\"10.1109/ICIPRM.1994.328195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The electrical activation characteristics of Si/sup +/ and Be/sup +/ ions implanted into InGaAsP (/spl lambda/=1-3 /spl mu/m) grown lattice-matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5/spl times/10/sup 12/-5/spl times/10/sup 14/ cm/sup -2/), annealing time (3-60 sec) and annealing temperature (575-750/spl deg/C). Maximum doping concentrations of /spl sim/2/spl times/10/sup 19/ cm/sup -3/ were obtained for both Si/sup +/ and Be/sup +/, with activation energies for electrical activation of 0.58 eV and 0.39 eV, respectively. Multiple energy F/sup +/ or H/sup +/ implants can be used to produce high resistance layers for isolation purposes - maximum sheet resistances of /spl sim/8/spl times/10/sup 6/ /spl Omega/spl square/ or /spl sim/10/sup 6/ /spl Omega/spl square/ for initially p/sup +/ or n/sup +/InGaAsP, respectively, were obtained for F/sup +/ implants followed by annealing near 450/spl deg/C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH/sub 4H/sub 2Ar discharges at low DC biases. The etch rates are the same for both n/sup +/ and p/sup +/ quaternary layers and are independent of the doping level.<>
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