III-V型材料中的异质反位缺陷

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752672

P. Omling

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引用次数: 0

摘要

综述了III-V型半导体中异质反位杂质的性质。详细介绍了目前对砷化镓中Sb/sub Ga/双给体异位缺陷的认识，并描述了其形成机制、自旋共振性质、电子结构以及我们对其的理论认识。最后，对As/sub Ga/-相关EL2缺陷的性能进行了比较。

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Hetero-antisite defects in III-V materials

The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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