高电流增强/(110)SiGe沟道pmosfet的迁移率和应变效应

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346812

J. Pan, P.W. Liu, T. Chang, W. Chiang, C. Tsai, Y. Lin, C. T. Tsai, G. H. Ma, S. Chien, S. Sun

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引用次数: 7

摘要

本文首次详细研究了在(110)Si衬底(/(110)SiGe沟道)上以沟道方向制备的SiGe沟道pmosfet的迁移率和应变机制。结合衬底取向、高迁移率通道材料和外源染色硅工艺，实现了超高迁移率增强，电流增益达到80%。研究了/(110)SiGe沟道p- mosfet的压阻系数，分析了应变对电流增强的影响。我们还比较了(100)和(110)表面SiGe通道的压阻系数推导结果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobility and Strain Effects on <110>/(110) SiGe channel pMOSFETs for High Current Enhancement

Mobility and strain mechanisms of SiGe channel pMOSFETs fabricated with <110> channel direction on (110) Si substrate (<110>/(110) SiGe channel) have been studied in details for the first time. The combination of substrate orientation, high mobility channel material and extrinsic stained-Si process demonstrates the ultra high mobility enhancement and results in 80% current gain. The piezoresistance coefficients of <110>/(110) SiGe channel p-MOSFETs were also studied to analyze the strain effect on current enhancement. We also compared the derived piezoresistance coefficients results of SiGe channel on (100) and (110) surfaces

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2006 International Electron Devices Meeting

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