SiC mosfet的动态导通电阻

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10224769

Jr R. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat

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引用次数: 0

摘要

这项工作描述了SiC mosfet中导通电阻的动态特性，并解释了在标准器件运行的时间尺度上，由于存在大量活性近界面氧化物陷阱(即使在以前未受应力的加工器件中)，每当出现大阈值电压不稳定时，这种情况是如何发生的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dynamic On-State Resistance in SiC MOSFETs

This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on the time scale of standard device operation, due to the presence of large numbers of active near-interfacial oxide traps—even in previously-unstressed, as-processed devices.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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