基于随机微分方程的40 nm及以上ReRAM可靠性分布预测

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409650

Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda

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引用次数: 20

摘要

成功地建立了一个基于随机微分方程的物理解析公式来描述ReRAM的内在变化。通过对40 nm 2mbit ReRAM的测试，证明了该公式可用于投影缩放后的ReRAM存储窗口和长期保留后的电阻分布。该配方还以实用和定量的长丝表征为中心。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation

A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.

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2015 IEEE International Electron Devices Meeting (IEDM)

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