Crystal growth of low EPD S-doped <100> InP by facet formation

The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal.<>