半绝缘lec生长GaAs晶圆中残余应变的定量光弹性表征及其与位错密度分布的关系

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752700

M. Yamada, M. Fukuzawa, N. Kimura, K. Kaminaka, M. Yokogawa

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引用次数: 4

摘要

通过使用新开发的计算机控制的红外偏光镜，测量了应变诱导双折射，以表征lece生长的薄GaAs[100]晶圆中的残余应变。结果表明，残余应变分布呈四重对称，最大值为10/sup -5/ /spl / sim/ 10/sup -4/。还测量了EPD剖面，以探索残余应变与EPD之间的相关性。提出了残余应变与EPD分布关系的模型，该模型较好地解释了目前的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers

By using a newly-developed computer-controlled infrared polariscope, strain-induced birefringence has been measured to characterize residual strain in thin LEC-grown GaAs [100] wafers. It is found that the residual strain profile exhibit fourfold symmetry and the maximum value attains to the order of 10/sup -5/ /spl sim/ 10/sup -4/. EPD profile has been also measured to explore a correlation between the residual strain and EPD. A model is proposed to explain the correlation between the residual strain and EPD profiles, which is found fairly to explain the present experimental results.

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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