SRAM保留测试:零增量时间集成与三月算法

Baosheng Wang, Yuejian Wu, Josh Yang, A. Ivanov, Y. Zorian
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引用次数: 2

摘要

测试数据保留故障(drf),特别是在由大量不同尺寸和类型的嵌入式sram组成的芯片上集成系统中,是具有挑战性的,并且通常是耗时的,因为需要在测试会话中引入所需的暂停时间。本文提出了一种新技术,称为预放电写入测试模式(PDWTM),该技术有效地将DRF测试集成到“常规”March算法中,从而使后者的速率(速度)保持不变。也就是说,PDWTM支持DRF测试,而不会在3月份的测试执行中产生额外的周期或暂停,因此可以在不花费整体测试时间的情况下实现额外的覆盖。我们表明,在写操作之前,通过预放电位线可以很容易地检测到drf。本文使用高速和低功耗存储单元对PDWTM进行了评估,这是基于典型存储设计方法的两种极端情况。
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SRAM retention testing: zero incremental time integration with March algorithms
Testing data retention faults (DRFs), particularly in integrated systems on chip comprised of very large number of various sizes and types of embedded SRAMs is challenging and typically time-consuming due to the required pause time that needs to be introduced in the test session. This paper proposes a novel technique, referred to as pre-discharge write test mode (PDWTM), that effectively integrates the testing of DRF within "regular" March algorithms such that the rate (speed) of the latter remains unaltered. That is, the PDWTM enables DRF testing without incurring the additional cycles or pauses in the March test execution thereby enabling additional coverage at no expense in terms of overall test time. We show that DRFs can be easily detected by pre-discharging bit lines before a write operation. Here, the PDWTM is evaluated using both high-speed and low power memory cells, representing two extreme cases based on the typical memory design methodologies.
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