{"title":"生长条件对MBE和MOCVD-AlInAs电性能的影响","authors":"J.K. Luo, H. Thomas","doi":"10.1109/ICIPRM.1993.380681","DOIUrl":null,"url":null,"abstract":"The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs\",\"authors\":\"J.K. Luo, H. Thomas\",\"doi\":\"10.1109/ICIPRM.1993.380681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs
The characterization of Al/sub x/In/sub 1-x/As layers grown on n/sup +/-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from /spl sim/10/sup 12/ cm/sup -3/ to /spl sim/10/sup 16/ cm/sup -3/ as the growth temperature was decreased from 740/spl deg/C to 500/spl deg/C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the /spl Gamma/-conduction band of AlInAs materials.<>
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