当前多银行5V PMOS ESD结构的可扩展性问题:根本原因和设计指南

N. K. Kranthi, Yang Xiu, Yang Xiao, R. Sankaralingam
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引用次数: 0

摘要

在这项工作中,在5V-PMOS多指结构中提出了一种独特的人体模型(HBM)失效。该故障对多组布局比较敏感,一般用于实现较高的保持电压。失踪的传输线脉冲(TLP)故障电流(It2)可伸缩性与脉宽检测,在multi-bank较低的结构和建立相关HBM失败。详细的3D- TCAD分析方法用于了解PMOS在单组和多组结构中的导通,进而了解It2在更长的脉冲宽度下的可扩展性。所获得的见解用于为开发健壮的PMOS器件提供设计指南。
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Current Scalability Issues in Multi-Bank 5V PMOS ESD structures: Root cause and Design Guideline
In this work, a unique Human Body Model (HBM) failure is presented in 5V-PMOS multi-finger structures. The failure is sensitive to the multi-bank layout, generally used to achieve higher holding voltage. Missing Transmission Line Pulse (TLP) failure current (It2) scalability is detected with pulse width, in multi-bank structures and a correlation is established with lower HBM failure. A detailed 3D- TCAD analysis approach is used to understand the PMOS turn-on in the single-bank and multi-bank structures, in turn, the It2 scalability for longer pulse width. The obtained insights are used to provide design guidelines for developing robust PMOS devices.
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