{"title":"pmosfet NBTI降解中的单孔脱阱事件","authors":"V. Huard, C. Parthasarathy, M. Denais","doi":"10.1109/IRWS.2005.1609552","DOIUrl":null,"url":null,"abstract":"This work shows that the recovery of NBTI degradation in ultra-small gate area pMOSFETs presents abrupt steps which are related to the detrapping of one hole. These results can be obtained by using a new approach to monitor the recovery, which is extremely more sensitive than previously proposed methodology. This result opens the way to model the NBTI degradation for ultra-small gate area devices which are main components of SRAM cells.","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Single-hole detrapping events in pMOSFETs NBTI degradation\",\"authors\":\"V. Huard, C. Parthasarathy, M. Denais\",\"doi\":\"10.1109/IRWS.2005.1609552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work shows that the recovery of NBTI degradation in ultra-small gate area pMOSFETs presents abrupt steps which are related to the detrapping of one hole. These results can be obtained by using a new approach to monitor the recovery, which is extremely more sensitive than previously proposed methodology. This result opens the way to model the NBTI degradation for ultra-small gate area devices which are main components of SRAM cells.\",\"PeriodicalId\":214130,\"journal\":{\"name\":\"2005 IEEE International Integrated Reliability Workshop\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Integrated Reliability Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2005.1609552\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-hole detrapping events in pMOSFETs NBTI degradation
This work shows that the recovery of NBTI degradation in ultra-small gate area pMOSFETs presents abrupt steps which are related to the detrapping of one hole. These results can be obtained by using a new approach to monitor the recovery, which is extremely more sensitive than previously proposed methodology. This result opens the way to model the NBTI degradation for ultra-small gate area devices which are main components of SRAM cells.
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