用于OEIC接收机的阶梯掺杂通道的高性能InGaAs/InP jfet

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380654

M. Blaser, R. Bauknecht, H. Melchior

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引用次数: 0

摘要

描述了用于光电集成电路(OEIC)接收器的阶梯掺杂InGaAs/InP结场效应晶体管的结构。栅极长度为3微米的晶体管的跨导率为140 mS/mm，传输频率为11.6 GHz，栅极泄漏电流约为1 /spl mu/ a /mm。在光电集成接收机中工作的晶体管的过量噪声系数为1.5。

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High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers

The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<>

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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