垂直电阻式RAM (VRRAM)在神经形态学应用潜力的研究

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-07 DOI:10.1109/IEDM.2015.7409717

G. Piccolboni, G. Molas, J. Portal, R. Coquand, M. Bocquet, D. Garbin, E. Vianello, C. Carabasse, V. Delaye, C. Pellissier, T. Magis, C. Cagli, M. Gely, O. Cueto, D. Deleruyelle, G. Ghibaudo, B. De Salvo, L. Perniola

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引用次数: 37

摘要

垂直RRAM (VRRAM)将电阻式RAM概念与垂直NAND技术和设计相结合，最近被提出作为未来大规模数据存储应用的一种经济高效且可扩展的技术。基于3D RRAM的神经网络也被提出来模拟突触[2]的增强和抑制，但没有讨论更复杂的电路。在之前的工作[3-4]中，使用平面器件提出并研究了各种基于RRAM的神经形态电路。

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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various RRAM based neuromorphic circuits were proposed and investigated, using planar devices.

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2015 IEEE International Electron Devices Meeting (IEDM)

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