H. Dauplaise, J. P. Lorenzo, E. Martín, K. Vaccaro, G. Ramseyer
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Evaporated thin silicon interlayers for indium phosphide device applications
The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition.<>
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