栅极-全能(GAA)双硅纳米线MOSFET (TSNWFET)具有15nm栅极长度和4nm半径的纳米线

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346838

K. Yeo, S. Suk, Ming Li, Y. Yeoh, K. Cho, Ki-Ha Hong, Seon-Pil Yun, Mong Sup Lee, N. Cho, Kwan-heum Lee, D. Hwang, Bokkyoung Park, Dong-Won Kim, Donggun Park, B. Ryu

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引用次数: 181

摘要

采用栅极长度为15 nm，纳米线半径为4 nm的GAA TSNWFET，具有良好的短沟道抗扰性。p-TSNWFET的驱动电流为1.94 mA/mum, n-TSNWFET的导通电流为1.44 mA/mum。利用三维和量子模拟的方法探讨了TSNWFET的优点和p-TSNWFET的性能增强

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Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation

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2006 International Electron Devices Meeting

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