S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui
{"title":"通过 MOCVD 生长的高电阻未掺杂 Al/sub 0.48/In/sub 0.52/As 层","authors":"S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui","doi":"10.1109/ICIPRM.1994.328170","DOIUrl":null,"url":null,"abstract":"It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High resistive undoped Al/sub 0.48/In/sub 0.52/As layers grown by MOCVD\",\"authors\":\"S. Ochi, T. Kimura, T. Ishida, T. Sonoda, S. Takamiya, S. Mitsui\",\"doi\":\"10.1109/ICIPRM.1994.328170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High resistive undoped Al/sub 0.48/In/sub 0.52/As layers grown by MOCVD
It is shown that the resistivity and the conduction type of undoped MOCVD Al/sub 0.48/In/sub 0.52/As layers depend strongly on the growth temperature (450/spl deg/C-650/spl deg/C). The conduction type changes from n-type, semi-insulating and p-type with the decrease of the growth temperature. High resistivity over 2/spl times/10/sup 8/ /spl Omega/-cm is successfully obtained from undoped Al/sub 0.48/In/sub 0.52/As layers grown at 500/spl deg/C. With help of SIMS and ICTS, it is found that the resistivity is substantially determined by the incorporation of carbon whose incorporation rate depends strongly on the growth temperature. The incorporated carbon compensates the native deep donors. The good selective growth of undoped Al/sub 0.48/In/sub 0.52/As layers is also achieved at even low growth temperature of 500/spl deg/C.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
