电学测试结构参考特征线宽的自动相衬图像分析

B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito
{"title":"电学测试结构参考特征线宽的自动相衬图像分析","authors":"B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito","doi":"10.1109/ICMTS.2002.1193161","DOIUrl":null,"url":null,"abstract":"NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis\",\"authors\":\"B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito\",\"doi\":\"10.1109/ICMTS.2002.1193161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.\",\"PeriodicalId\":188074,\"journal\":{\"name\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2002.1193161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2002.1193161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

NIST,桑迪亚国家实验室,国际SEMATECH正在开发一种新型的线宽的校准标准光刻的关键维度(CD)计量仪器控制。标准参考特征是电路线宽测试结构的电桥,该电路线宽测试结构在单晶硅薄膜中进行图像化。通过高分辨率透射电子显微镜(HRTEM)生成的每个晶圆上桥特征样本横截面的相衬图像,用于跟踪标准参考特征的测量电线宽度到硅的晶格常数。本文描述了相衬图像的自动分析,该分析是为了最小化成本和标准线宽的不确定性而开发的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Passive multiplexer test structure for fast and accurate contact and via fail rate evaluation Useful numerical techniques for compact modeling CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer Logic characterization vehicle to determine process variation impact on yield and performance of digital circuits A consistent and scalable PSPICE HFET-Model for DC- and S-parameter-simulation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1