用于表面微加工器件的非基板晶圆转移技术

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308) Pub Date : 2000-01-23 DOI:10.1109/MEMSYS.2000.838591

H. Nguyen, P. Patterson, H. Toshiyoshi, M. Wu

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引用次数: 20

摘要

我们报告了一种新的晶圆转移技术，可以去除和转移表面微加工层到应用特定的基板上。然而，该工艺不仅限于MEMS器件，还可以适用于其他半导体器件。成功地转移了1 cm/spl倍/1 cm MEMS芯片与静电驱动卷曲悬臂开关到透明石英衬底已经证明。转移器件的拉入电压为31 V，而标准硅衬底上的器件为23 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A substrate-independent wafer transfer technique for surface-micromachined devices

We report on a new wafer transfer technique that can remove and transfer surface-micromachined layers to application-specific substrates. This process, however, is not limited to only MEMS devices and can be applicable to other semiconductor devices. Successful transfer of a 1 cm/spl times/1 cm MEMS chip with electrostatically actuated curled cantilever switches to a transparent quartz substrate has been demonstrated. Pull-in voltage for transferred devices is 31 V compared with 23 V for devices on standard silicon substrates.

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Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)

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