三端SOT-MTJ器件及相应阵列的全可靠性表征

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117643

Xinyi Xu, Hongchao Zhang, Chuanpeng Jiang, Jinhao Li, Shi-Ji Lu, Yunpeng Li, H. Du, Xueying Zhang, Zhaohao Wang, K. Cao, Weisheng Zhao, Shuqin Lyu, Hao Xu, Bonian Jiang, Le Wang, Bowen Man, Cong Zhang, Dandan Li, Shuhui Li, Xiaofei Fan, Gefei Wang, Hong-xi Liu

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引用次数: 0

摘要

本文系统地研究了自旋轨道转矩(SOT)磁随机存取存储器(MRAM)器件的可靠性性能，包括电迁移(EM)、应力迁移(SM)、耐久性和数据保留。结果表明，SOT-MRAM器件在工作条件下通过了10年以上的电磁寿命要求，在175℃下烘烤1000小时以上通过了SM要求。此外，对于相同的SOT-MRAM器件，证明了接近1014个周期的高耐用性和超过10年存储时间的稳健数据保留。这一全面表征填补了SOT-MRAM可靠性研究的空白，并将有助于SOT-MRAM的商业化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays

We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 1014 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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