利用深x射线光刻技术制造高纵横比的MEMS亚微米结构

H. Ueno, N. Nishi, S. Sugiyama
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引用次数: 3

摘要

本文介绍了利用深x射线光刻技术制造实用高性能微机电系统(MEMS)的高纵横比亚微米结构。制造亚微米宽度和间隙(线和空间)的微结构是实用和高性能MEMS的必要条件。为了制备亚微米微结构,研究了亚微米深x射线光刻技术。采用深x射线光刻技术制备了最小宽度为0.2 /spl mu/m、长度为6 /spl mu/m、高度为17 /spl mu/m的亚微米PMMA结构。
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Fabrication of sub-micron structures with high aspect ratio for MEMS using deep X-ray lithography
In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.
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