解决垂直STT-MRAM器件级和芯片级热稳定性尺寸依赖关系不一致的矛盾

L. Thomas, G. Jan, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, S. Serrano-Guisan, R. Tong, K. Pi, D. Shen, R. He, J. Haq, Z. Teng, R. Annapragada, V. Lam, Yu-Jen Wang, T. Zhong, T. Torng, P. Wang
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引用次数: 30

摘要

目前基于器件级数据对垂直STT-MRAM热稳定性的理解表明,热稳定性因子A几乎与~30nm以上的器件直径无关。在这里,我们报告了与传统观点相反的是,芯片级数据保留在直径在55到100纳米之间表现出实质性的尺寸依赖性。我们表明,广泛用于测量A的方法对于大于~30 nm的器件是不准确的,导致对尺寸依赖性的严重低估。我们推导了一个改进的模型,使我们能够协调在器件和芯片水平上测量的A的尺寸依赖性。
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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.
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