MOSFET可扩展性限制和“新前沿”器件

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015365

D. Antoniadis

{"title":"MOSFET可扩展性限制和“新前沿”器件","authors":"D. Antoniadis","doi":"10.1109/VLSIT.2002.1015365","DOIUrl":null,"url":null,"abstract":"Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"MOSFET scalability limits and \\\"new frontier\\\" devices\",\"authors\":\"D. Antoniadis\",\"doi\":\"10.1109/VLSIT.2002.1015365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 24

摘要

硅基mosfet可扩展到10nm左右的栅极长度，但将远远低于相应的性能增强。在未来的CMOS技术中，必须采用高迁移率材料和器件结构，以消除静电控制中掺杂的使用，并采用极低的接触电阻工艺。采用全新输运原理的新型前沿场效应管显示出希望，但距离实际实施还有很长的路要走。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

MOSFET scalability limits and "new frontier" devices

Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

自引率

0.00%

发文量