High efficiency buried quantum wires defined by a local order-disorder transition in Ga/sub 0.5/In/sub 0.5/P/ (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P

The bandgap difference between the ordered and the disordered phase of GaInP of about 100 meV was used for a lateral potential modulation in GaInP/AlGaInP heterostructures by means of masked ion implantation and rapid thermal annealing. The authors found a very sharp transition from the ordered to the disordered state of the material both as a function of the annealing temperature and the implantation dose. The photoluminescence of the buried quantum wires fabricated with mask widths down to 25 nm shows a high quantum efficiency and a maximum blue shift of the wire luminescence of 35 meV.<>