陡峭亚阈值摆动隧道效应晶体管:GaN/InN/GaN和过渡金属二硫化物通道

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409835

A. Seabaugh, S. Fathipour, Wenjun Li, Hao Lu, J. Park, A. Kummel, D. Jena, S. Fullerton‐Shirey, P. Fay

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引用次数: 26

摘要

随着对隧道场效应晶体管(TFET)理解的不断深入，新的方法正在出现，以降低关闭电流，降低隧道结的缺陷密度，并增加出现60 mV/ 10年亚阈值摆幅(I60)的最高电流。III-N异质结和过渡金属-二硫族化合物(TMD)材料在结设计和掺杂方面引发了一些新的思考。

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Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels

As the understanding of tunnel field-effect transistors (TFET) advances, new approaches are emerging to lower off-currents, lower defect density in tunnel junctions, and to increase the highest current at which the subthreshold swing of 60 mV/decade (I60) appears. III-N heterojunctions and transition-metal-dichalcogenide (TMD) materials are forcing some new thinking in junction design and doping.

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2015 IEEE International Electron Devices Meeting (IEDM)

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