首次演示Ge纳米线CMOS电路:最低SS为64 mV/dec,最高gmax为1057 μS/μm, Ge CMOS逆变器最大电压增益为54 V/V

Heng Wu, Wangran Wu, M. Si, P. Ye
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引用次数: 41

摘要

本文首次在绝缘体(GeOI)衬底上对锗纳米线CMOS电路进行了实验验证。纳米线CMOS器件的通道长度(Lch)为100 ~ 40 nm,纳米线高度(HNW)为10 nm,纳米线宽度(WNW)为40 ~ 10 nm,介电eot为2 nm和5 nm。详细研究了四种类型的Ge mosfet:积累模式(AM)和反转模式(IM) nfet和pfet。在锗纳米线nfet上获得了64 mV/dec的低SS和1057 μS/μm的高跨导(gmax)。此外,还首次实现了AM - fet和IM - fet混合Ge纳米线CMOS。电压增益最高可达54v /V。
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First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 μS/μm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters
Ge nanowire CMOS circuits are experimentally demonstrated on a Ge on insulator (GeOI) substrate for the first time. The nanowire CMOS devices have channel lengths (Lch) from 100 to 40 nm, nanowire height (HNW) of 10 nm and nanowire widths (WNW) from 40 to 10 nm, and dielectric EOTs of 2 and 5 nm. Four types of Ge MOSFETs: accumulation mode (AM) and inversion mode (IM) nFETs and pFETs are studied in great details. Record low SS of 64 mV/dec and high maximum trans-conductance (gmax) of 1057 μS/μm are obtained on Ge nanowire nFETs. Furthermore, hybrid Ge nanowire CMOS with AM nFET and IM pFET is also first realized. The highest maximum voltage gain reaches 54 V/V.
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