分析双极技术辐射效应的试验结构

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 1900-01-01 DOI:10.1109/ICMTS.2002.1193196

H. Barnaby, peixiong zhao, K. Galloway, D. Ball, R. Pease, P. Fouillat

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引用次数: 0

摘要

集成在BiCMOS测试芯片上的结构是专门设计来表征双极技术中辐射效应的复杂机制的。两种商业工艺的双极器件被修改为包括独立的栅极端子。通过使用栅极控制，可以独立分析辐射缺陷对离散双极器件和模拟双极电路的影响，从而便于在器件和电路水平上定量、实验验证地描述辐射缺陷与电响应之间的非线性关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Test structures for analyzing radiation effects in bipolar technologies

Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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