微均匀性对LEC掺杂SI-GaAs晶体电子迁移率的影响

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752712

Z. Wang, Y. Dai, C. Li, H. P. Lu, Z. Deng, S. Wan, S. Xu, M.F. Shun, H. Shun, L.Y. Lin

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引用次数: 0

摘要

采用霍尔效应测量、红外吸收、光致发光作图等技术，对不同来源的LEC掺杂SI-GaAs材料进行了系统的研究。通过空间分辨光致发光观察到，电子迁移率与杂质和缺陷在晶圆上的空间分布密切相关。在理论计算电子迁移率时，引入了非均匀性引起的垃圾电荷区散射。通过最小二乘法拟合温度相关霍尔测量得到的迁移率数据，给出了一个半经验公式。此外，还得到了空间电荷区的密度、散射截面和电离杂质浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of micro-uniformity on electron mobility of LEC undoped SI-GaAs crystals

LEC undoped SI-GaAs materials obtained from different sources have been systematically investigated by using various techniques such as Hall effect measurements, IR absorption and Photoluminescence Mapping etc.. A strong dependence of electron mobility on spatial distribution of impurities and defects across the wafers revealed by spatially resolved photoluminescence at R.T. are observed. Spam-charge region scattering resulted from nominiformity is induced in theoretically calculating the electron mobility. A semi-empirical formula is presented by least-square fitting the mobility data obtained from temperature dependent Hall measurements. Additionally, the density and the scattering cross section of space-charge region and ionized impurity concentration were obtained.

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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