基于集成扇出(InFO)晶圆级封装技术的毫米波系统集成的高性能无源器件

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409763

C. Tsai, J. Hsieh, Wei-Heng Lin, L. Yen, J. Hung, T. Peng, Hsi-Ching Wang, Cheng-Yu Kuo, I.L. Huang, W. Chu, Yi-Yang Lei, C. H. Yu, L. Sheu, C. Hsieh, C. S. Liu, K. Yee, Chuei-Tang Wang, Doug C. H. Yu

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引用次数: 11

摘要

毫米波(MMW)系统的高性能无源器件，包括电感器、环形谐振器、功率合成器、耦合器、平衡器、传输线和天线，首次采用集成的扇形输出(InFO)晶圆级封装技术实现。电感品质因数大于40;功率合成器、耦合器和平衡器比片上无源具有更低的传输损耗;天线效率达60%以上。InFO上的这些设备为移动通信和物联网应用提供了低噪声和功耗的毫米波系统。

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High performance passive devices for millimeter wave system integration on integrated fan-out (InFO) wafer level packaging technology

High performance passive devices for millimeter wave (MMW) system, including inductor, ring resonator, power combiner, coupler, balun, transmission line, and antenna, are first realized using integrated fan-out (InFO) wafer level packaging technology. The inductors has quality factor over 40; the power combiner, coupler, and balun show lower transmission loss than on-chip passives; antenna has the efficiency of over 60%. These devices on InFO enable low noise and power MMW system for mobile communication and IoT applications.

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2015 IEEE International Electron Devices Meeting (IEDM)

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