采用异质栅浮栅mos结构的铁电模拟联想存储技术

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015415

D. Kobayashi, T. Shibata, Y. Fujimori, T. Nakamura, H. Takasu

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引用次数: 3

摘要

利用铁电材料作为模板向量信息的存储手段，开发了一种模拟联想存储技术。为了使联想存储单元适应宽电压范围的输入信号，引入了一种异栅浮栅mos结构。这一概念已经用自制的测试装置和电路进行了实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A ferroelectric analog associative memory technology employing hetero-gate floating-gate-MOS structure

An analog associative memory technology has been developed using ferroelectric materials as a means of storing template vector information. In order to accommodate the associative memory cell to a wide voltage range of the input signal, a hetero-gate floating-gate-MOS structure has been introduced. The concept has been experimentally verified using fabricated test devices and circuits.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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