闪存内置自诊断与测试模式控制

J. Yeh, Yan-Ting Lai, Yuan-Yuan Shih, Cheng-Wen Wu, Chien-Hung Ho, Yen-Tai Lin
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引用次数: 7

摘要

本文的目的是提出一种经济有效的快闪存储器故障诊断方法。闪存的市场正在快速增长。闪存测试的研究主要是为了降低测试成本,提高产品成品率。本文提出了一种闪存故障诊断流程。我们还提出了一种灵活的内置自诊断(BISD)设计,增强了测试模式控制,通过使用并行编程和擦除以及采用并行移出机制,减少了测试时间和诊断数据移出周期。我们的bsd电路的面积开销仅为256Mb商品闪存芯片的0.5%左右。工业芯片的实验结果表明,所提出的诊断方法对故障类型的识别具有较高的准确率。
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Flash memory built-in self-diagnosis with test mode control
The objective of this paper is to present a cost-effective fault diagnosis methodology for flash memory. Flash memory is enjoying a rapid market growth. The research for flash memory testing is mainly to reduce the test cost and improve the production yield. In this paper, we propose a fault diagnosis flow for flash memory. We also propose a flexible built-in self-diagnosis (BISD) design with enhanced test mode control, which reduces the test time and diagnostic data shift-out cycles by using parallel programming and erasure and employing a parallel shift-out mechanism. The area overhead of our BISD circuit is only about 0.5% for a 256Mb commodity flash memory chip. Experimental results from industrial chips show that the proposed diagnosis methodology has high accuracy in distinguishing the fault type.
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