J. Yeh, Yan-Ting Lai, Yuan-Yuan Shih, Cheng-Wen Wu, Chien-Hung Ho, Yen-Tai Lin
{"title":"闪存内置自诊断与测试模式控制","authors":"J. Yeh, Yan-Ting Lai, Yuan-Yuan Shih, Cheng-Wen Wu, Chien-Hung Ho, Yen-Tai Lin","doi":"10.1109/VTS.2005.45","DOIUrl":null,"url":null,"abstract":"The objective of this paper is to present a cost-effective fault diagnosis methodology for flash memory. Flash memory is enjoying a rapid market growth. The research for flash memory testing is mainly to reduce the test cost and improve the production yield. In this paper, we propose a fault diagnosis flow for flash memory. We also propose a flexible built-in self-diagnosis (BISD) design with enhanced test mode control, which reduces the test time and diagnostic data shift-out cycles by using parallel programming and erasure and employing a parallel shift-out mechanism. The area overhead of our BISD circuit is only about 0.5% for a 256Mb commodity flash memory chip. Experimental results from industrial chips show that the proposed diagnosis methodology has high accuracy in distinguishing the fault type.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Flash memory built-in self-diagnosis with test mode control\",\"authors\":\"J. Yeh, Yan-Ting Lai, Yuan-Yuan Shih, Cheng-Wen Wu, Chien-Hung Ho, Yen-Tai Lin\",\"doi\":\"10.1109/VTS.2005.45\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The objective of this paper is to present a cost-effective fault diagnosis methodology for flash memory. Flash memory is enjoying a rapid market growth. The research for flash memory testing is mainly to reduce the test cost and improve the production yield. In this paper, we propose a fault diagnosis flow for flash memory. We also propose a flexible built-in self-diagnosis (BISD) design with enhanced test mode control, which reduces the test time and diagnostic data shift-out cycles by using parallel programming and erasure and employing a parallel shift-out mechanism. The area overhead of our BISD circuit is only about 0.5% for a 256Mb commodity flash memory chip. Experimental results from industrial chips show that the proposed diagnosis methodology has high accuracy in distinguishing the fault type.\",\"PeriodicalId\":268324,\"journal\":{\"name\":\"23rd IEEE VLSI Test Symposium (VTS'05)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"23rd IEEE VLSI Test Symposium (VTS'05)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2005.45\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"23rd IEEE VLSI Test Symposium (VTS'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2005.45","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flash memory built-in self-diagnosis with test mode control
The objective of this paper is to present a cost-effective fault diagnosis methodology for flash memory. Flash memory is enjoying a rapid market growth. The research for flash memory testing is mainly to reduce the test cost and improve the production yield. In this paper, we propose a fault diagnosis flow for flash memory. We also propose a flexible built-in self-diagnosis (BISD) design with enhanced test mode control, which reduces the test time and diagnostic data shift-out cycles by using parallel programming and erasure and employing a parallel shift-out mechanism. The area overhead of our BISD circuit is only about 0.5% for a 256Mb commodity flash memory chip. Experimental results from industrial chips show that the proposed diagnosis methodology has high accuracy in distinguishing the fault type.