{"title":"块状半绝缘砷化镓的光- epr和光电数据的时间演化","authors":"T. Benchiguer, B. Marí, C. Schwab, U. Desnica","doi":"10.1109/SIM.1992.752705","DOIUrl":null,"url":null,"abstract":"The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs\",\"authors\":\"T. Benchiguer, B. Marí, C. Schwab, U. Desnica\",\"doi\":\"10.1109/SIM.1992.752705\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752705\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs
The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.
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