从具有广泛分布时间尺度的缺陷状态的角度研究NBTI

B. Kaczer, T. Grasser, J. Martín-Martínez, E. Simoen, M. Aoulaiche, P. Roussel, G. Groeseneken
{"title":"从具有广泛分布时间尺度的缺陷状态的角度研究NBTI","authors":"B. Kaczer, T. Grasser, J. Martín-Martínez, E. Simoen, M. Aoulaiche, P. Roussel, G. Groeseneken","doi":"10.1109/IRPS.2009.5173224","DOIUrl":null,"url":null,"abstract":"Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/ƒ noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"97","resultStr":"{\"title\":\"NBTI from the perspective of defect states with widely distributed time scales\",\"authors\":\"B. Kaczer, T. Grasser, J. Martín-Martínez, E. Simoen, M. Aoulaiche, P. Roussel, G. Groeseneken\",\"doi\":\"10.1109/IRPS.2009.5173224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/ƒ noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"97\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 97

摘要

观察到负偏置温度不稳定性(NBTI)弛豫与1/ f噪声之间的广泛相似性。观察了小场效应管中NBTI弛豫的个体跃迁,并推导了泊松缺陷数统计。最后,在小型装置中,除了缺陷数的变化外,还应考虑缺陷时间的广泛分布。
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NBTI from the perspective of defect states with widely distributed time scales
Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/ƒ noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in small devices.
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