I. Mouatakif, J.C. DeJaeger, M. Lefebvre, G. Salmer, G. Post
{"title":"功率用InP MISFET的物理建模与实验研究","authors":"I. Mouatakif, J.C. DeJaeger, M. Lefebvre, G. Salmer, G. Post","doi":"10.1109/ICIPRM.1993.380588","DOIUrl":null,"url":null,"abstract":"A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physical modeling and experimental study of the InP MISFET for power applications\",\"authors\":\"I. Mouatakif, J.C. DeJaeger, M. Lefebvre, G. Salmer, G. Post\",\"doi\":\"10.1109/ICIPRM.1993.380588\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380588\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380588","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical modeling and experimental study of the InP MISFET for power applications
A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.<>
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