{"title":"一种新的MEMS变形镜晶圆级膜转移技术","authors":"E. Yang, D. Wiberg","doi":"10.1109/MEMSYS.2001.906483","DOIUrl":null,"url":null,"abstract":"This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. A 1 /spl mu/m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.50 /spl mu/m, shows a vertical deflection of 0.37 /spl mu/m at 55 V. The proposed technique has the following benefits over those previously reported: (1) No post-assembly release process (e.g. using HF) is required, and no wax, photoresist, or epoxy is used for the transfer purpose; (2) The bonded interface is completely isolated from any acid, etchant, or solvent, which ensures a clean and flat membrane surface; (3) It offers the capability of transferring wafer-level membranes over deformable actuators.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A new wafer-level membrane transfer technique for MEMS deformable mirrors\",\"authors\":\"E. Yang, D. Wiberg\",\"doi\":\"10.1109/MEMSYS.2001.906483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. A 1 /spl mu/m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.50 /spl mu/m, shows a vertical deflection of 0.37 /spl mu/m at 55 V. The proposed technique has the following benefits over those previously reported: (1) No post-assembly release process (e.g. using HF) is required, and no wax, photoresist, or epoxy is used for the transfer purpose; (2) The bonded interface is completely isolated from any acid, etchant, or solvent, which ensures a clean and flat membrane surface; (3) It offers the capability of transferring wafer-level membranes over deformable actuators.\",\"PeriodicalId\":311365,\"journal\":{\"name\":\"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-01-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2001.906483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2001.906483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new wafer-level membrane transfer technique for MEMS deformable mirrors
This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. A 1 /spl mu/m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.50 /spl mu/m, shows a vertical deflection of 0.37 /spl mu/m at 55 V. The proposed technique has the following benefits over those previously reported: (1) No post-assembly release process (e.g. using HF) is required, and no wax, photoresist, or epoxy is used for the transfer purpose; (2) The bonded interface is completely isolated from any acid, etchant, or solvent, which ensures a clean and flat membrane surface; (3) It offers the capability of transferring wafer-level membranes over deformable actuators.