{"title":"半绝缘砷化镓中子嬗变掺杂的载流子控制","authors":"T. Benchiguer, B. Marí, C. Schwab","doi":"10.1109/SIM.1992.752675","DOIUrl":null,"url":null,"abstract":"The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"1155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier control by neutron-transmutation doping of semi-insulating GaAs\",\"authors\":\"T. Benchiguer, B. Marí, C. Schwab\",\"doi\":\"10.1109/SIM.1992.752675\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"1155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752675\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carrier control by neutron-transmutation doping of semi-insulating GaAs
The photoquenching of the paramagnetic As/sup +//sub Ga/ -related antisites in semi insulating GaAs shows evidence for a metastability akin to that of EL2. To test a recent model of this phenomenon based on hindered charge transfers between donors and acceptors, neutron transmutation has been used to study the effect of additional dopants. The experiment shows the strong effect of residual acceptor related lattice damage, but in overall agrees with the charge transfer model in a comparison with the traditional configurational change model.
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