A. Carnera, A. Gasparotto, M. Caldironi, S. Pellegrino, M. Tromby, F. Vidimari, C. Frigeri
{"title":"铁离子注入外延生长InP制备半绝缘埋层的研究","authors":"A. Carnera, A. Gasparotto, M. Caldironi, S. Pellegrino, M. Tromby, F. Vidimari, C. Frigeri","doi":"10.1109/ICIPRM.1993.380641","DOIUrl":null,"url":null,"abstract":"The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the production of semi-insulating buried layers in epitaxially grown InP by Fe ion implantation\",\"authors\":\"A. Carnera, A. Gasparotto, M. Caldironi, S. Pellegrino, M. Tromby, F. Vidimari, C. Frigeri\",\"doi\":\"10.1109/ICIPRM.1993.380641\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"142 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380641\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the production of semi-insulating buried layers in epitaxially grown InP by Fe ion implantation
The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms.<>
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