{"title":"带InAs亚井的AlAs/InGaAs/AlAs RTD界面粗糙度散射","authors":"P. Roblin, R. Potter, A. Fathimulla","doi":"10.1109/ICIPRM.1993.380629","DOIUrl":null,"url":null,"abstract":"The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interface roughness scattering in AlAs/InGaAs/AlAs RTD with InAs subwell\",\"authors\":\"P. Roblin, R. Potter, A. Fathimulla\",\"doi\":\"10.1109/ICIPRM.1993.380629\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380629\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interface roughness scattering in AlAs/InGaAs/AlAs RTD with InAs subwell
The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic.<>
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