200mm GaN-on-Si外延和e-mode器件技术

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409709

D. Marcon, Y. Saripalli, S. Decoutere

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引用次数: 66

摘要

本文对三种用于GaN-on-200mm-Si外延的高压缓冲结构进行了比较和讨论。本文还讨论了在这些缓冲器上实现电子模式操作的两种器件架构，即嵌入式栅极HEMTs和p-GaN HEMTs技术。强调了阈值电压/输出电流调谐，阈值电压稳定性和可能的问题。结合两种方法的优点，提出了一种可能的器件架构，并提供了初步测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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200mm GaN-on-Si epitaxy and e-mode device technology

In this work, three types of high-voltage buffer architectures for GaN-on-200mm-Si epitaxy are compared and discussed. Two device architectures, recessed gate MISHEMTs and p-GaN HEMTs technology, to obtain e-mode operation developed on these buffers are also discussed. Threshold voltage/output current tuning, threshold voltage stability and possible issues are highlighted. A possible device architecture that combines the best of the two approaches is proposed together with preliminary test results.

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2015 IEEE International Electron Devices Meeting (IEDM)

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