{"title":"低阈值1.3 /spl μ m激光中应变InAsP/InGaAsP量子阱结构的MOVPE生长","authors":"M. Yamamoto, N. Yamamoto, J. Nakano","doi":"10.1109/ICIPRM.1993.380668","DOIUrl":null,"url":null,"abstract":"The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"194 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers\",\"authors\":\"M. Yamamoto, N. Yamamoto, J. Nakano\",\"doi\":\"10.1109/ICIPRM.1993.380668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"194 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
摘要
作者报道了通过低压金属有机气相外延生长的应变InAsP量子阱结构，其发射速度为1.3 /spl μ m /m。采用梯度折射率分离禁锢异质结构单量子阱40-/spl mu/m宽脊条波导激光器，实现了低至88 A/cm/sup / /的阈值电流密度。这种优异的激光性能清楚地证明了应变InAsP/InGaAsP量子阱结构在长波光学器件应用中的高材料质量。
MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers
The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<>
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