在亚10nm的Fowler-Nordheim和直接隧穿状态下氧化击穿的电压加速

2005 IEEE International Integrated Reliability Workshop Pub Date : 2005-10-17 DOI:10.1109/IRWS.2005.1609560

R. Duschl, R. Vollertsen

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引用次数: 12

摘要

结果表明，tddb -幂律模型能很好地描述非净场效应晶体管和非净场效应晶体管在直接隧穿状态下的实验数据。在这项工作中，研究了它是否可以扩展到弹性福勒-诺德海姆隧道占主导地位的电压范围。研究了nFET和pet器件，发现它们的行为不同。对于nFET，提出了一个适用于整个sub- 10nm范围的通用幂律表达式。

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Voltage acceleration of oxide breakdown in the sub-10 nm Fowler-Nordheim and direct tunneling regime

The TDDB-power-law model was shown to describe the experimental data for nFET and pFET devices in the direct tunneling regime very well. In this work it is investigated whether it can be extended into the voltage range, where elastic Fowler-Nordheim tunneling dominates. Both nFET and pFET devices are investigated and were found to behave different. For nFET a universal power-law expression is proposed for the entire sub-10 nm range.

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2005 IEEE International Integrated Reliability Workshop

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